Comment by westurner

Would an electrochemical plasma process that takes graphene filters caked in CO2 (for e.g CNT production) be more useful?

Aluminum red mud is 40% iron.

Is hydrogen useful for plasma enhanced CVD?

Are there electrical plasma improvements to CVD specifically for CNT carbon nanotube production?

What optimizations of CVD produce nonmetallic aligned carbon nanotubes (with band gaps useful for semiconductor production for FET field-effect transistors, and integrated optical components)?

From gemini3pro, for human consideration;

> [ PECVD: Plasma-enhanced CVD] allows VA-CNT synthesis at temperatures as low as 450–650°C

> High-flux hydrogen (H_2) carrier gas is used in floating-catalyst CVD (FCCVD) to reduce the number of nuclei, favoring isolated semiconducting nanotubes over bundled metallic ones.

> Electric Field Alignment: PECVD uses the built-in electric field of the plasma sheath to guide nanotubes into vertical or horizontal alignment as they grow.

> [ Kite growth CVD with nonmetallic seeds like nanodiamond grow in tip-growth mode ]

Which would be useful for FET in Carbon-based chips

Couldn't hydrogen (cold) plasma clean a CVD reaction chamber?